On native point defects in ZnSe
نویسندگان
چکیده
Aiming at a fundamental understanding of the defect chemistry pure ZnSe for optical and quantum applications, systematic density functional theory calculations with hybrid exchange-correlation functionals were performed to build an accurate database native defects in ZnSe, including isolated first nearest-neighbor defect–defect complexes. From formation energies, zinc vacancy is found be most prevalent as Fermi level approaches conduction band edge, while interstitial selenium tetrahedron become valence maximum. The divacancy complex, consisting nearest-neighboring vacancies, also have favorable binding energy across entire bandgap. Its is, however, always higher than either or vacancy, meaning it will never predominant equilibrium. Finally, point extended spin coherence Fluorine-implanted was recently discovered, exhibit broad emission peak centered 2.28 eV. identity this determined its associated complex according electron paramagnetic resonance measurements. Explicit simulations signatures all vacancy-related conducted here, showing that both are likely contributors peak.
منابع مشابه
Native defects and self-compensation in ZnSe.
Wide-band-gap semiconductors typically can be doped either n type or p type, but not both. Compensation by native point defects has often been invoked as the source of this difficulty. We examine the wide-band-gap semiconductor ZnSe with first-principles total-energy calculations, using a mixed-basis program for an accurate description of the material. Formation energies are calculated for all ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0092736